Switching Study In CdS/CdTe Structures

AbstractThe paper reports preliminary data on the characteristics of a new electronic switching device based on CdS/CdTe heterojunction. The device is polar and is switched from OFF to ON (WRITE) or ON to OFF (ERASE) by voltage opposite signs. The threshold voltage for WRITE operation is (3-4 V), depending on the device, and for ERASE is about (-2V). The OFF and ON resistance are typically 40M, and 1.5k respectively. Particularly notable features of the new memory device are its transition times (100sec for both the WRITE or ERASE operations).Keywords:switching, semiconductor devices and materials.